Open AccessKinetic Control of Ultrafast Transient Liquid Assisted Growth of Solution‐Derived YBa 2 Cu 3 O 7 ‐x Superconducting Films
Author(s) -
Rasi Silvia,
Queraltó Albert,
Banchewski Juri,
Saltarelli Lavinia,
Garcia Diana,
Pacheco Adrià,
Gupta Kapil,
Kethamkuzhi Aiswarya,
Soler Laia,
Jareño Julia,
Ricart Susagna,
Farjas Jordi,
RouraGrabulosa Pere,
Mocuta Cristian,
Obradors Xavier,
Puig Teresa
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202203834
Subject(s) - kinetic energy , superconductivity , materials science , electrical resistivity and conductivity , transient (computer programming) , cuprate , ultrashort pulse , synchrotron , analytical chemistry (journal) , diffraction , barium , copper , ostwald ripening , condensed matter physics , nanotechnology , chemistry , optics , metallurgy , physics , laser , chromatography , quantum mechanics , computer science , operating system
Transient liquid assisted growth (TLAG) is an ultrafast non‐equilibrium growth process mainly governed by kinetic parameters, which are only accessible through fast in situ characterizations. In situ synchrotron X‐ray diffraction (XRD) analysis and in situ electrical resistivity measurements are used to derive kinetic diagrams of YBa 2 Cu 3 O 7− x (YBCO) superconducting films prepared via TLAG and to reveal the unique peculiarities of the process. In particular, diagrams for the phase evolution and the YBCO growth rates have been built for the two TLAG routes. It is shown that TLAG transient liquids can be obtained upon the melting of two barium cuprate phases (and not just one), differentiated by their copper oxidation state. This knowledge serves as a guide to determine the processing conditions to reach high performance films at high growth rates. With proper control of these kinetic parameters, films with critical current densities of 2–2.6 MA cm −2 at 77 K and growth rates between 100–2000 nm s −1 are reached. These growth rates are 1.5–3 orders of magnitude higher than those of conventional methods.