
85 °C/85%‐Stable n‐i‐p Perovskite Photovoltaics with NiO x Hole Transport Layers Promoted By Perovskite Quantum Dots
Author(s) -
Cheng Fangwen,
Cao Fang,
Chen Binwen,
Dai Xinfeng,
Tang Ziheng,
Sun Yifei,
Yin Jun,
Li Jing,
Zheng Nanfeng,
Wu Binghui
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202201573
Subject(s) - non blocking i/o , materials science , perovskite (structure) , energy conversion efficiency , photovoltaics , quantum dot , work function , nanotechnology , photovoltaic system , chemical engineering , optoelectronics , layer (electronics) , chemistry , catalysis , ecology , biochemistry , engineering , biology
Power conversion efficiency (PCE) and long‐term stability are two vital issues for perovskite solar cells (PSCs). However, there is still a lack of suitable hole transport layers (HTLs) to endow PSCs with both high efficiency and stability. Here, NiO x nanoparticles are promoted as an efficient and 85 °C/85%‐stable inorganic HTL for high‐performance n‐i‐p PSCs, with the introduction of perovskite quantum dots (QDs) between perovskite and NiO x as systematic interfacial engineering. The QD intercalation enhances film morphology and assembly regulation of NiO x HTLs . Due to structure–function correlations, hole mobility within NiO x HTL is improved. And the hole extraction from perovskite to NiO x is also facilitated, resulting from reduced trap states and optimized energy level alignments. Hence, the promoted NiO x ‐based n‐i‐p PSCs exhibit high PCE (21.59%) and excellent stability (sustaining 85 °C aging in air without encapsulation). Furthermore, encapsulated solar modules with QDs‐promoted NiO x HTLs show impressive stability during 85 °C/85% aging test for 1000 hours. With high transparency, QDs‐promoted NiO x is also demonstrated to be an advanced HTL for semitransparent PSCs. This work develops promising NiO x inorganic HTL in n‐i‐p PSCs for manufacturing next‐generation photovoltaic devices.