Open Access
Sub‐Nanometer Electron Beam Phase Patterning in 2D Materials
Author(s) -
Zheng Fangyuan,
Guo Deping,
Huang Lingli,
Wong Lok Wing,
Chen Xin,
Wang Cong,
Cai Yuan,
Wang Ning,
Lee ChunSing,
Lau Shu Ping,
Ly Thuc Hue,
Ji Wei,
Zhao Jiong
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202200702
Subject(s) - materials science , scanning transmission electron microscopy , nanotechnology , nanolithography , lithography , nanometre , nanoscopic scale , phase transition , electron beam lithography , atomic units , optoelectronics , transmission electron microscopy , resist , condensed matter physics , composite material , physics , fabrication , medicine , alternative medicine , pathology , layer (electronics) , quantum mechanics
Abstract Phase patterning in polymorphic two‐dimensional (2D) materials offers diverse properties that extend beyond what their pristine structures can achieve. If precisely controllable, phase transitions can bring exciting new applications for nanometer‐scale devices and ultra‐large‐scale integrations. Here, the focused electron beam is capable of triggering the phase transition from the semiconducting T’’ phase to metallic T’ and T phases in 2D rhenium disulfide (ReS 2 ) and rhenium diselenide (ReSe 2 ) monolayers, rendering ultra‐precise phase patterning technique even in sub‐nanometer scale is found. Based on knock‐on effects and strain analysis, the phase transition mechanism on the created atomic vacancies and the introduced substantial in‐plane compressive strain in 2D layers are clarified. This in situ high‐resolution scanning transmission electron microscopy (STEM) and in situ electrical characterizations agree well with the density functional theory (DFT) calculation results for the atomic structures, electronic properties, and phase transition mechanisms. Grain boundary engineering and electrical contact engineering in 2D are thus developed based on this patterning technique. The patterning method exhibits great potential in ultra‐precise electron beam lithography as a scalable top‐down manufacturing method for future atomic‐scale devices.