Open AccessSubstitutional Vanadium Sulfide Nanodispersed in MoS 2 Film for Pt‐Scalable Catalyst (Adv. Sci. 16/2021)
Author(s) -
AgyapongFordjour Frederick OseiTutu,
Yun Seok Joon,
Kim HyungJin,
Choi Wooseon,
Kirubasankar Balakrishnan,
Choi Soo Ho,
Adofo Laud Anim,
Boandoh Stephen,
Kim Yong In,
Kim Soo Min,
Kim YoungMin,
Lee Young Hee,
Han YoungKyu,
Kim Ki Kang
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202170101
Subject(s) - chalcogen , electrocatalyst , vanadium , basal plane , transition metal , vacancy defect , catalysis , sulfide , materials science , atom (system on chip) , nanotechnology , crystallography , chemistry , metallurgy , electrochemistry , electrode , computer science , biochemistry , embedded system
Transition Metal Dichalcogenides In article number 2003709, Young Hee Lee, Young‐Kyu Han, Ki Kang Kim, and co‐workers demonstrate the unique basal plane activation of 2D MoS 2 via substituted V atom near chalcogen vacancy (VS n unit) in the lattice. The VS n units act as active sites and charge transfer pathways for efficient hydrogen evolution. This study adds insight into ways to engineer active sites in transition metal dichalcogenides electrocatalyst at the atomic level.