Open AccessReversible Rectifiers: Reversible Half Wave Rectifier Based on 2D InSe/GeSe Heterostructure with Near‐Broken Band Alignment (Adv. Sci. 4/2021)
Author(s) -
Yan Yong,
Li Shasha,
Du Juan,
Yang Huai,
Wang Xiaoting,
Song Xiaohui,
Li Lixia,
Li Xueping,
Xia Congxin,
Liu Yufang,
Li Jingbo,
Wei Zhongming
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202170021
Subject(s) - heterojunction , modulation (music) , diode , substrate (aquarium) , rectifier (neural networks) , optoelectronics , materials science , van der waals force , cover (algebra) , inverter , physics , computer science , engineering , voltage , quantum mechanics , biology , mechanical engineering , stochastic neural network , machine learning , molecule , recurrent neural network , acoustics , artificial neural network , ecology
In article number 1903252, Congxin Xia, Yufang Liu, Jingbo Li, Zhongming Wei, and co‐workers describe a reversible diode based on 2D InSe/GeSe van der Waals heterostructure. In the image, yellow lines decorated on the substrate, which are apparently severed but actually connected, implies the near‐broken band alignment of this diode. The diode can be effectively reversed by gate‐bias (control box) through the modulation of band alignment from staggered type to broken type. As shown in the cover image, the unique characteristics of this device are expected to be the core of a motor controller with the speed and direction modulation.