Open AccessReversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures
Author(s) -
Chen CiaoFen,
Yang ShihHsien,
Lin CheYi,
Lee MuPai,
Tsai MengYu,
Yang FengShou,
Chang YuanMing,
Li Mengjiao,
Lee KoChun,
Ueno Keiji,
Shi Yumeng,
Lien ChenHsin,
Wu WenWei,
Chiu PoWen,
Li Wenwu,
Lo ShunTsung,
Lin YenFu
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202106016
Subject(s) - ambipolar diffusion , heterojunction , materials science , optoelectronics , transistor , van der waals force , doping , nanotechnology , chemical physics , chemistry , electrical engineering , electron , physics , voltage , molecule , organic chemistry , quantum mechanics , engineering
Van der Waals (vdW) heterostructures—in which layered materials are purposely selected to assemble with each other—allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet‐of‐things applications. Here, an O 2 ‐ultrasensitive MoTe 2 material and an O 2 ‐insensitive SnS 2 material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. The charge‐polarity control (i.e., doping and de‐doping processes), which arises owing to the interaction between O 2 adsorption/desorption and tellurium defects at the MoTe 2 surface, means that the MoTe 2 /SnS 2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti‐ambipolar transfer characteristics. Based on the dynamic control of the charge‐polarity properties, an inverter, output polarity controllable amplifier, p‐n diode, and ternary‐state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.