
Tuning the Exchange Bias Effect in 2D van der Waals Ferro‐/Antiferromagnetic Fe 3 GeTe 2 /CrOCl Heterostructures
Author(s) -
Zhang Tianle,
Zhang Yujun,
Huang Mingyuan,
Li Bo,
Sun Yinghui,
Qu Zhe,
Duan Xidong,
Jiang Chengbao,
Yang Shengxue
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202105483
Subject(s) - antiferromagnetism , exchange bias , heterojunction , van der waals force , spintronics , condensed matter physics , ferromagnetism , spins , materials science , magnetic circular dichroism , anisotropy , exchange interaction , magnetic anisotropy , magnetic field , physics , optics , spectral line , molecule , magnetization , quantum mechanics , astronomy
The exchange bias effect is extremely expected in 2D van der Waals (vdW) ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures due to the high‐quality interface. CrOCl possesses strong magnetic anisotropy at 2D limit, and is an ideal antiferromagnet for constructing FM/AFM heterostructures to explore the exchange bias effect. Here, the exchange bias effect in Fe 3 GeTe 2 (FGT)/CrOCl heterostructures through both anomalous Hall effect (AHE) and reflective magnetic circular dichroism (RMCD) measurements is studied. In the AHE measurements, the exchange bias field ( H EB ) at 3 K exhibits a distinct increase from ≈150 Oe to ≈450 Oe after air exposure, and such variation is attributed to the formation of an oxidized layer in FGT by analyzing the cross‐sectional microstructure. The H EB is successfully tuned by changing the FGT/CrOCl thickness and the cooling field. Furthermore, a larger H EB of ≈750 Oe at 1.7 K in FGT/CrOCl heterostructure through RMCD measurements is observed, and it is proposed that the larger H EB in RMCD measurements is related to the distribution of uncompensated spins at the interface. This work reveals several intriguing phenomena of the exchange bias effect in 2D vdW magnetic systems, which paves the way for the study of related spintronic devices.