Open AccessHighly‐Tunable Intrinsic Room‐Temperature Ferromagnetism in 2D van der Waals Semiconductor Cr x Ga 1− x Te
Author(s) -
Zhang Gaojie,
Wu Hao,
Zhang Liang,
Zhang Shanfei,
Yang Li,
Gao Pengfei,
Wen Xiaokun,
Jin Wen,
Guo Fei,
Xie Yuanmiao,
Li Hongda,
Tao Boran,
Zhang Wenfeng,
Chang Haixin
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202103173
Subject(s) - ferromagnetism , spintronics , condensed matter physics , magnetic semiconductor , van der waals force , curie temperature , semiconductor , materials science , optoelectronics , physics , quantum mechanics , molecule
The combination of semiconductivity and tunable ferromagnetism is pivotal for electrical control of ferromagnetism and next‐generation low‐power spintronic devices. However, Curie temperatures ( T C ) for most traditional intrinsic ferromagnetic semiconductors (≤200 K) and recently discovered two‐dimensional (2D) ones (<70 K) are far below room temperature. 2D van der Waals (vdW) semiconductors with intrinsic room‐temperature ferromagnetism remain elusive considering the unfavored 2D long‐range ferromagnetic order indicated by Mermin–Wagner theorem. Here, vdW semiconductor Cr x Ga 1− x Te crystals exhibiting highly tunable above‐room‐temperature ferromagnetism with bandgap 1.62–1.66 eV are reported. The saturation magnetic moment ( M sat ) of Cr x Ga 1− x Te crystals can be effectively regulated up to ≈5.4 times by tuning Cr content and ≈75.9 times by changing the thickness. vdW Cr x Ga 1− x Te ultrathin semiconductor crystals show robust room‐temperature ferromagnetism with the 2D quantum confinement effect, enabling T C 314.9–329 K for nanosheets, record‐high for intrinsic vdW 2D ferromagnetic semiconductors. This work opens an avenue to room‐temperature 2D vdW ferromagnetic semiconductor for 2D electronic and spintronic devices.