Open AccessNew Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials
Author(s) -
Wang Gang,
Zhuang Xinming,
Huang Wei,
Yu Junsheng,
Zhang Huaiwu,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202101473
Subject(s) - transistor , nanotechnology , materials science , design for manufacturability , electronics , wearable technology , thin film transistor , computer science , power consumption , power (physics) , engineering physics , optoelectronics , electrical engineering , wearable computer , embedded system , engineering , physics , layer (electronics) , quantum mechanics , voltage
Source‐gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin‐film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short‐channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low‐cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high‐performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview.