Open AccessAtomically‐Precise Texturing of Hexagonal Boron Nitride Nanostripes
Author(s) -
Ali Khadiza,
Fernández Laura,
Kherelden Mohammad A.,
Makarova Anna A.,
Píš Igor,
Bondino Federica,
Lawrence James,
de Oteyza Dimas G.,
Usachov Dmitry Yu.,
Vyalikh Denis V.,
García de Abajo F. Javier,
ElFattah Zakaria M. Abd,
Ortega J. Enrique,
Schiller Frederik
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202101455
Subject(s) - monolayer , materials science , hexagonal boron nitride , vicinal , heterojunction , nanotechnology , nanoscopic scale , boron nitride , epitaxy , semiconductor , optoelectronics , exfoliation joint , hexagonal crystal system , graphene , crystallography , layer (electronics) , chemistry , organic chemistry
Monolayer hexagonal boron nitride (hBN) is attracting considerable attention because of its potential applications in areas such as nano‐ and opto‐electronics, quantum optics and nanomagnetism. However, the implementation of such functional hBN demands precise lateral nanostructuration and integration with other two‐dimensional materials, and hence, novel routes of synthesis beyond exfoliation. Here, a disruptive approach is demonstrated, namely, imprinting the lateral pattern of an atomically stepped one‐dimensional template into a hBN monolayer. Specifically, hBN is epitaxially grown on vicinal Rhodium (Rh) surfaces using a Rh curved crystal for a systematic exploration, which produces a periodically textured, nanostriped hBN carpet that coats Rh(111)‐oriented terraces and lattice‐matched Rh(337) facets with tunable width. The electronic structure reveals a nanoscale periodic modulation of the hBN atomic potential that leads to an effective lateral semiconductor multi‐stripe. The potential of such atomically thin hBN heterostructure for future applications is discussed.