Open AccessOptically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics
Author(s) -
Wang Miaosheng,
Xu Hengxing,
Wu Ting,
Ambaye Haile,
Qin Jiajun,
Keum Jong,
Ivanov Ilia N.,
Lauter Valeria,
Hu Bin
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202004488
Subject(s) - photoexcitation , magnetization , perovskite (structure) , materials science , ferromagnetism , condensed matter physics , magnetism , spins , dipole , optoelectronics , chemistry , physics , magnetic field , atomic physics , crystallography , excited state , organic chemistry , quantum mechanics
Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth‐sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high‐quality perovskite (MAPbBr 3 ) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr 3 . The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite’s surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new‐generation spin‐related optoelectronic devices.