Open AccessOperando Study of Thermal Oxidation of Monolayer MoS 2
Author(s) -
Park Sangwook,
GarciaEsparza Angel T.,
Abroshan Hadi,
Abraham Baxter,
Vinson John,
Gallo Alessandro,
Nordlund Dennis,
Park Joonsuk,
Kim Taeho Roy,
Vallez Lauren,
AlonsoMori Roberto,
Sokaras Dimosthenis,
Zheng Xiaolin
Publication year - 2021
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202002768
Subject(s) - monolayer , x ray photoelectron spectroscopy , thermal oxidation , materials science , chemical vapor deposition , molybdenum disulfide , thermal stability , molybdenum , chemical engineering , oxide , analytical chemistry (journal) , nanotechnology , chemistry , organic chemistry , metallurgy , engineering
Monolayer MoS 2 is a promising semiconductor to overcome the physical dimension limits of microelectronic devices. Understanding the thermochemical stability of MoS 2 is essential since these devices generate heat and are susceptible to oxidative environments. Herein, the promoting effect of molybdenum oxides (MoO x ) particles on the thermal oxidation of MoS 2 monolayers is shown by employing operando X‐ray absorption spectroscopy, ex situ scanning electron microscopy and X‐ray photoelectron spectroscopy. The study demonstrates that chemical vapor deposition‐grown MoS 2 monolayers contain intrinsic MoO x and are quickly oxidized at 100 °C (3 vol% O 2 /He), in contrast to previously reported oxidation thresholds (e.g., 250 °C, t ≤ 1 h in the air). Otherwise, removing MoO x increases the thermal oxidation onset temperature of monolayer MoS 2 to 300 °C. These results indicate that MoO x promote oxidation. An oxide‐free lattice is critical to the long‐term stability of monolayer MoS 2 in state‐of‐the‐art 2D electronic, optical, and catalytic applications.