Open AccessSeamlessly Splicing Metallic Sn x Mo 1− x S 2 at MoS 2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor
Author(s) -
Shao Gonglei,
Lu Yizhen,
Hong Jinhua,
Xue XiongXiong,
Huang Jinqiang,
Xu Zheyuan,
Lu Xiangchao,
Jin Yuanyuan,
Liu Xiao,
Li Huimin,
Hu Sheng,
Suenaga Kazu,
Han Zheng,
Jiang Ying,
Li Shisheng,
Feng Yexin,
Pan Anlian,
Lin YungChang,
Cao Yang,
Liu Song
Publication year - 2020
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202002172
Subject(s) - heterojunction , materials science , doping , chemical vapor deposition , epitaxy , semiconductor , optoelectronics , nanotechnology , fermi level , metal , electron , metallurgy , layer (electronics) , physics , quantum mechanics
Accurate design of the 2D metal–semiconductor (M–S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high‐performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M–S Sn x Mo 1− x S 2 /MoS 2 heterostructure is precisely prepared with in situ growth of metallic Sn x Mo 1− x S 2 by doping Sn atoms at semiconductor MoS 2 edge via one‐step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M–S heterostructure is 2.5 times higher than that of pure MoS 2 in microreactor, attributed to the efficient electron–hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M–S lateral heterostructures by controllable doping heteroatoms. The M–S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system.