Open AccessQuasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes
Author(s) -
Chang Hongliang,
Chen Zhaolong,
Liu Bingyao,
Yang Shenyuan,
Liang Dongdong,
Dou Zhipeng,
Zhang Yonghui,
Yan Jianchang,
Liu Zhiqiang,
Zhang Zihui,
Wang Junxi,
Li Jinmin,
Liu Zhongfan,
Gao Peng,
Wei Tongbo
Publication year - 2020
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202001272
Subject(s) - materials science , optoelectronics , light emitting diode , nitride , ultraviolet , diode , sapphire , substrate (aquarium) , dislocation , graphene , aluminium , nanotechnology , optics , composite material , layer (electronics) , laser , oceanography , physics , geology
Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is presented and a high‐performance 272 nm DUV‐LED is demonstrated. Guided by first‐principles calculations, it is found that AlN grown on Gr prefers lateral growth both energetically and kinetically, thereby resulting in a Gr‐driven quasi‐2D growth mode. The strong lateral growth mode enables most of dislocations to annihilate each other at the AlN/Gr interface, and therefore the AlN epilayer can quickly coalesce and flatten the nanopatterned sapphire substrate. Based on the high quality and low strain of AlN film grown on Gr, the as‐fabricated 272 nm DUV‐LED shows a 22% enhancement of output power than that with low‐temperature AlN buffer, following a negligible wavelength shift under high current. This facile strategy opens a pathway to drastically improve the performance of DUV‐LEDs.