Open AccessHysteretic Ion Migration and Remanent Field in Metal Halide Perovskites
Author(s) -
Liu Yongtao,
Borodinov Nikolay,
Lorenz Matthias,
Ahmadi Mahshid,
Kalinin Sergei V.,
Ievlev Anton V.,
Ovchinnikova Olga S.
Publication year - 2020
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202001176
Subject(s) - halide , ion , hysteresis , chemical physics , materials science , redistribution (election) , nanotechnology , chemistry , inorganic chemistry , physics , condensed matter physics , organic chemistry , politics , political science , law
The gap in understanding how underlying chemical dynamics impact the functionality of metal halide perovskites (MHPs) leads to the controversy about the origin of many phenomena associated with ion migration in MHPs. In particular, the debate regarding the impact of ion migration on current–voltage ( I – V ) hysteresis of MHPs devices has lasted for many years, where the difficulty lies in directly uncovering the chemical dynamics, as well as identifying and separating the impact of specific ions. In this work, using a newly developed time‐resolved time‐of‐flight secondary ion mass spectrometry CH 3 NH 3 + and I − migrations in CH 3 NH 3 PbI 3 are directly observed, revealing hysteretic CH 3 NH 3 + and I − migrations. Additionally, hysteretic CH 3 NH 3 + migration is illumination‐dependent. Correlating these results with the I – V characterization, this work uncovers that CH 3 NH 3 + redistribution can induce a remanent field leading to a spontaneous current in the device. It unveils that the CH 3 NH 3 + migration is responsible for the illumination‐associated I – V hysteresis in MHPs. Hysteretic ion migration has not been uncovered and the contribution of any ions (e.g., CH 3 NH 3 + ) has not been specified before. Such insightful and detailed information has up to now been missing, which is critical to improving MHPs photovoltaic performance and developing MHPs‐based memristors and synaptic devices.