Open AccessDouble Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
Author(s) -
Jung KilSu,
Heo Keun,
Kim MinJe,
Andreev Maksim,
Seo Seunghwan,
Kim JinOk,
Lim JiHye,
Kim KwanHo,
Kim Sungho,
Kim Ki Seok,
Yeom Geun Yong,
Cho Jeong Ho,
Park JinHong
Publication year - 2020
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202000991
Subject(s) - pentacene , heterojunction , materials science , resistor , transistor , hafnium , dangling bond , optoelectronics , van der waals force , quantum tunnelling , voltage , nanotechnology , silicon , chemistry , molecule , electrical engineering , layer (electronics) , zirconium , engineering , organic chemistry , metallurgy , thin film transistor
Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.