Open AccessSurface Oxygen Vacancies: Dynamics of Photo‐Induced Surface Oxygen Vacancies in Metal‐Oxide Semiconductors Studied Under Ambient Conditions (Adv. Sci. 22/2019)
Author(s) -
Glass Daniel,
Cortés Emiliano,
BenJaber Sultan,
Brick Thomas,
Peveler William J.,
Blackman Christopher S.,
Howle Christopher R.,
QuesadaCabrera Raul,
Parkin Ivan P.,
Maier Stefan A.
Publication year - 2019
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201970132
Subject(s) - oxide , materials science , oxygen , vacancy defect , raman spectroscopy , metal , semiconductor , chemical physics , x ray photoelectron spectroscopy , nanotechnology , photochemistry , chemical engineering , chemistry , metallurgy , crystallography , optoelectronics , optics , physics , organic chemistry , engineering
Surface oxygen vacancy defects are some of the most reactive sites but are notoriously difficult to detect, often healing upon exposure to air. In article number 1901841, Ivan P. Parkin, Stefan A. Maier, and co‐workers show how photo‐induced enhanced Raman spectroscopy (PIERS) can be used to indirectly track vacancy formation and healing of photo‐induced vacancies under ambient conditions on metal oxide semiconductors.