Open Access:Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)
Author(s) -
Chen Changdong,
Yang BoRu,
Li Gongtan,
Zhou Hang,
Huang Bolong,
Wu Qian,
Zhan Runze,
Noh YongYoung,
Minari Takeo,
Zhang Shengdong,
Deng Shaozhi,
Sirringhaus Henning,
Liu Chuan
Publication year - 2019
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201970040
Subject(s) - doping , materials science , transistor , x ray photoelectron spectroscopy , oxide , thin film transistor , optoelectronics , hydrogen , electron mobility , field effect transistor , nanotechnology , chemical engineering , chemistry , electrical engineering , voltage , layer (electronics) , organic chemistry , metallurgy , engineering
In article number 1801189 , Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SIN X encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility.