Open AccessEffective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature
Author(s) -
Liu Xingchen,
Tang Ning,
Zhang Shixiong,
Zhang Xiaoyue,
Guan Hongming,
Zhang Yunfan,
Qian Xuan,
Ji Yang,
Ge Weikun,
Shen Bo
Publication year - 2020
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201903400
Subject(s) - spintronics , condensed matter physics , electric field , materials science , spin polarization , spin (aerodynamics) , spin hall effect , relaxation (psychology) , quantum well , optoelectronics , physics , ferromagnetism , optics , electron , laser , quantum mechanics , psychology , social psychology , thermodynamics
III‐nitride wide bandgap semiconductors are favorable materials for developing room temperature spintronic devices. The effective manipulation of spin dynamics is a critical request to realize spin field‐effect transistor (FET). In this work, the dependence of the spin relaxation time on external strain‐induced polarization electric field is investigated in InGaN/GaN multiple quantum wells (MQWs) by time‐resolved Kerr rotation spectroscopy. Owing to the almost canceled two different spin–orbit coupling (SOC), the spin relaxation time as long as 311 ps in the MQWs is obtained at room temperature, being much longer than that in bulk GaN. Furthermore, upon applying an external uniaxial strain, the spin relaxation time decreases sensitively, which originates from the breaking of the SU (2) symmetry. The extracted ratio of the SOC coefficients shows a linear dependence on the external strain, confirming the essential role of the polarization electric field. This effective manipulation of the spin relaxation time sheds light on GaN‐based nonballistic spin FET working at room temperature.