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Multilayered PdSe 2 /Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application
Author(s) -
Zeng LongHui,
Chen QingMing,
Zhang ZhiXiang,
Wu Di,
Yuan Huiyu,
Li YanYong,
Qarony Wayesh,
Lau Shu Ping,
Luo LinBao,
Tsang Yuen Hong
Publication year - 2019
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201901134
Subject(s) - responsivity , photodetector , materials science , optoelectronics , perovskite (structure) , schottky barrier , specific detectivity , schottky diode , polarization (electrochemistry) , ultraviolet , detector , optics , physics , diode , chemistry , crystallography
Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA 1− x Cs x PbI 3 perovskite with PdSe 2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe 2 /perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈10 4 , a high responsivity ( R ) of 313 mA W −1 , a decent specific detectivity ( D *) of ≈10 13 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe 2 /perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe 2 /perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe 2 /perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.

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