Open AccessTunable Control of Interlayer Excitons in WS 2 /MoS 2 Heterostructures via Strong Coupling with Enhanced Mie Resonances
Author(s) -
Yan Jiahao,
Ma Churong,
Huang Yingcong,
Yang Guowei
Publication year - 2019
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201802092
Subject(s) - exciton , heterojunction , trion , photoluminescence , monolayer , materials science , condensed matter physics , biexciton , scattering , optoelectronics , nanotechnology , physics , optics
Strong Coulomb interactions in monolayer transition metal dichalcogenides (TMDs) produce strongly bound excitons, trions, and biexcitons. The existence of multiexcitonic states has drawn tremendous attention because of its promising applications in quantum information. Combining different monolayer TMDs into van der Waals (vdW) heterostructures opens up opportunities to engineer exciton devices and bring new phenomena. Spatially separated electrons and holes in different layers produce interlayer excitons. Although much progress has been made on excitons in single layers, how interlayer excitons contribute the photoluminescence emission and how to tailor the interlayer exciton emission have not been well understood. Here, room temperature strong coupling between interlayer excitons in the WS 2 /MoS 2 vdW heterostructure and cavity‐enhanced Mie resonances in individual silicon nanoparticles (Si NPs) are demonstrated. The heterostructures are inserted into a Si film‐Si NP all‐dielectric platform to realize effective energy exchanges and Rabi oscillations. Besides mode splitting in scattering, tunable interlayer excitonic emission is also observed. The results make it possible to design TMDs heterostructures with various excitonic states for future photonics devices.