Open AccessFluorination‐Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots
Author(s) -
Tang Xian,
Chen Hong,
Ponraj Joice Sophia,
Dhanabalan Sathish Chander,
Xiao Quanlan,
Fan Dianyuan,
Zhang Han
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201800420
Subject(s) - quantum dot , exfoliation joint , black phosphorus , materials science , fluorine , density functional theory , etching (microfabrication) , nanotechnology , chemical physics , degradation (telecommunications) , chemical engineering , optoelectronics , computational chemistry , chemistry , layer (electronics) , metallurgy , graphene , electronic engineering , engineering
Abstract The environmental instability and uneliminable electronic trap states in black phosphorus quantum dots (BPQDs) limit the optoelectronics and related applications of BPQDs. Here, fluorinated BPQDs (F‐BPQDs) are successfully synthesized by using a facile electrochemical exfoliation and synchronous fluorination method. The F‐BPQDs exhibit robust ambient stability and limited fluorination capability, showing a nonstoichiometric fluorination degree ( D F ) maximum of ≈0.68. Density functional theory calculations confirm that due to the edge etching effect of fluorine adatoms, the simulated F‐BPQDs become structurally unstable when D F surpasses the limit. Furthermore, the trap states of BPQDs can be effectively eliminated via fluorination to obtain a coordination number of 3 or 5 for fluorinated and unfluorinated phosphorus atoms. The results reveal that the air‐stable F‐BPQDs exhibit fluorine defect‐enhanced electronic tolerance, which is crucial for nanophotonics and nanoelectronics applications.