Open AccessRoom Temperature Uniaxial Magnetic Anisotropy Induced By Fe‐Islands in the InSe Semiconductor Van Der Waals Crystal
Author(s) -
Moro Fabrizio,
Bhuiyan Mahabub A.,
Kudrynskyi Zakhar R.,
Puttock Robert,
Kazakova Olga,
Makarovsky Oleg,
Fay Michael W.,
Parmenter Christopher,
Kovalyuk Zakhar D.,
Fielding Alistar J.,
Kern Michal,
van Slageren Joris,
Patanè Amalia
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201800257
Subject(s) - spintronics , van der waals force , condensed matter physics , semiconductor , ferromagnetism , materials science , magnetic semiconductor , anisotropy , crystal (programming language) , magnetic anisotropy , spin (aerodynamics) , nanotechnology , optoelectronics , magnetic field , physics , optics , magnetization , quantum mechanics , molecule , computer science , thermodynamics , programming language
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore's law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe‐islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.