Open AccessEfficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer
Author(s) -
Lee Yonghui,
Lee Seunghwan,
Seo Gabseok,
Paek Sanghyun,
Cho Kyung Taek,
Huckaba Aron J.,
Calizzi Marco,
Choi Dongwon,
Park JinSeong,
Lee Dongwook,
Lee Hyo Joong,
Asiri Abdullah M.,
Nazeeruddin Mohammad Khaja
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201800130
Subject(s) - perovskite (structure) , passivation , materials science , atomic layer deposition , layer (electronics) , energy conversion efficiency , optoelectronics , tin oxide , perovskite solar cell , indium tin oxide , planar , oxide , deposition (geology) , tin , photovoltaic system , chemical engineering , nanotechnology , metallurgy , paleontology , computer graphics (images) , doping , sediment , computer science , engineering , biology , ecology
Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO 2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO 2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO 2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.