Open AccessAtomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
Author(s) -
Wu Xing,
Yu Kaihao,
Cha Dongkyu,
Bosman Michel,
Raghavan Nagarajan,
Zhang Xixiang,
Li Kun,
Liu Qi,
Sun Litao,
Pey Kinleong
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201800096
Subject(s) - resistive random access memory , nucleation , materials science , electrode , substrate (aquarium) , optoelectronics , transmission electron microscopy , thermal conduction , nanotechnology , protein filament , chemistry , composite material , oceanography , organic chemistry , geology
Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a highly doped n ++ Si as the bottom electrode with Ni‐electrode/HfO x /SiO 2 asymmetric self‐rectifying resistive switching device is fabricated. The interfacial defects in the HfO x /SiO 2 junction and n ++ Si substrate result in the reproducible rectifying behavior. In situ transmission electron microscopy is used to quantitatively study the properties of the morphology, chemistry, and dynamic nucleation–dissolution evolution of the chains of defects at the atomic scale. The spatial and temporal correlation between the concentration of oxygen vacancies and Ni‐rich conductive filament modifies the resistive switching effect. This study has important implications at the array‐level performance of high density resistive switching memories.