Open AccessAtomic‐Scale Mott–Schottky Heterojunctions of Boron Nitride Monolayer and Graphene as Metal‐Free Photocatalysts for Artificial Photosynthesis
Author(s) -
Zhang KeXin,
Su Hui,
Wang HongHui,
Zhang JunJun,
Zhao ShuYu,
Lei Weiwei,
Wei Xiao,
Li XinHao,
Chen JieSheng
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201800062
Subject(s) - heterojunction , materials science , graphene , boron nitride , monolayer , photocatalysis , schottky barrier , semiconductor , nanotechnology , chemical engineering , optoelectronics , chemistry , catalysis , organic chemistry , diode , engineering
Abstract Heterojunction photocatalysts at present are still suffering from the low charge separation/transfer efficiency due to the poor charge mobility of semiconductor‐based photocatalysts. Atomic‐scale heterojunction‐type photocatalysts are regarded as a promising and effective strategy to overcome the drawbacks of traditional photocatalysts for higher photoenergy conversion efficiencies. Herein, an atomic‐scale heterojunction composed of a boron nitride monolayer and graphene (h‐BN‐C/G) is constructed to significantly shorten the charge transfer path to promote the activation of molecular oxygen for artificial photosynthesis (exemplified with oxidative coupling of amines to imines). As the thinnest heterojunction, h‐BN‐C/G gives the highest conversion, which is eightfold higher than that of the mechanical mixture of graphene and boron nitride monolayers. h‐BN‐C/G exhibits a high turnover frequency value (4.0 mmol benzylamine g −1 h −1 ), which is 2.5‐fold higher than that of the benchmark metal‐free photocatalyst in the literature under even critical conditions.