Open AccessHigh Performance Amplifier Element Realization via MoS 2 /GaTe Heterostructures
Author(s) -
Yan Xiao,
Zhang David Wei,
Liu Chunsen,
Bao Wenzhong,
Wang Shuiyuan,
Ding Shijin,
Zheng Gengfeng,
Zhou Peng
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201700830
Subject(s) - materials science , optoelectronics , transistor , amplifier , heterojunction , electronic circuit , bipolar junction transistor , electrical engineering , cmos , voltage , engineering
2D layered materials (2DLMs), together with their heterostructures, have been attracting tremendous research interest in recent years because of their unique physical and electrical properties. A variety of circuit elements have been made using mechanically exfoliated 2DLMs recently, including hard drives, detectors, sensors, and complementary metal oxide semiconductor field‐effect transistors. However, 2DLM‐based amplifier circuit elements are rarely studied. Here, the integration of 2DLMs with 3D bulk materials to fabricate vertical junction transistors with current amplification based on a MoS 2 /GaTe heterostructure is reported. Vertical junction transistors exhibit the typical current amplification characteristics of conventional bulk bipolar junction transistors while having good current transmission coefficients (α ∼ 0.95) and current gain coefficient (β ∼ 7) at room temperature. The devices provide new attractive prospects in the investigation of 2DLM‐based integrated circuits based on amplifier circuits.