Open AccessTin Selenide (SnSe): Growth, Properties, and Applications
Author(s) -
Shi Weiran,
Gao Minxuan,
Wei Jinping,
Gao Jianfeng,
Fan Chenwei,
Ashalley Eric,
Li Handong,
Wang Zhiming
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201700602
Subject(s) - materials science , selenide , tin , doping , figure of merit , thermoelectric effect , semiconductor , band gap , nanotechnology , optoelectronics , thermoelectric materials , photovoltaic system , engineering physics , electrical engineering , metallurgy , physics , composite material , thermal conductivity , selenium , thermodynamics , engineering
Abstract The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b ‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed.