Open AccessNanogap‐Engineerable Electromechanical System for Ultralow Power Memory
Author(s) -
Zhang Jian,
Deng Ya,
Hu Xiao,
Nshimiyimana Jean Pierre,
Liu Siyu,
Chi Xiannian,
Wu Pei,
Dong Fengliang,
Chen Peipei,
Chu Weiguo,
Zhou Haiqing,
Sun Lianfeng
Publication year - 2018
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201700588
Subject(s) - materials science , carbon nanotube , nanotechnology , fabrication , electronics , nanoscopic scale , nanomaterials , non volatile memory , optoelectronics , electrical engineering , engineering , medicine , alternative medicine , pathology
Nanogap engineering of low‐dimensional nanomaterials has received considerable interest in a variety of fields, ranging from molecular electronics to memories. Creating nanogaps at a certain position is of vital importance for the repeatable fabrication of the devices. Here, a rational design of nonvolatile memories based on sub‐5 nm nanogaped single‐walled carbon nanotubes (SWNTs) via the electromechanical motion is reported. The nanogaps are readily realized by electroburning in a partially suspended SWNT device with nanoscale region. The SWNT memory devices are applicable for both metallic and semiconducting SWNTs, resolving the challenge of separation of semiconducting SWNTs from metallic ones. Meanwhile, the memory devices exhibit excellent performance: ultralow writing energy (4.1 × 10 −19 J bit −1 ), ON/OFF ratio of 10 5 , stable switching ON operations, and over 30 h retention time in ambient conditions.