Open AccessFlexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)
Author(s) -
Chen Shanliang,
Shang Minghui,
Gao Fengmei,
Wang Lin,
Ying Pengzhan,
Yang Weiyou,
Fang Xiaosheng
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201670002
Subject(s) - field electron emission , materials science , doping , current (fluid) , nanotechnology , field (mathematics) , optoelectronics , engineering physics , electrical engineering , physics , engineering , quantum mechanics , electron , mathematics , pure mathematics
Novel, P‐doped, flexible SiC field emitters, with both low turn‐on fields and extremely high current emission stability are demonstrated by W. Y. Yang, X. S. Fang, and co‐workers in article number 1500256. The high stability under high temperatures and extreme bending conditions opens up practical applications for SiC field emitters in flexible nanodevices.