Open AccessBlack Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
Author(s) -
Han SuTing,
Hu Liang,
Wang Xiandi,
Zhou Ye,
Zeng YuJia,
Ruan Shuangchen,
Pan Caofeng,
Peng Zhengchun
Publication year - 2017
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201600435
Subject(s) - black phosphorus , quantum dot , resistive random access memory , materials science , resistive touchscreen , optoelectronics , voltage , random access , phosphorus , random access memory , set (abstract data type) , nanotechnology , computer science , electrical engineering , engineering , computer network , metallurgy , computer hardware , programming language
Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.