Open AccessSide‐Gated In 2 O 3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
Author(s) -
Su Meng,
Yang Zhenyu,
Liao Lei,
Zou Xuming,
Ho Johnny C.,
Wang Jingli,
Wang Jianlu,
Hu Weida,
Xiao Xiangheng,
Jiang Changzhong,
Liu Chuansheng,
Guo Tailiang
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201600078
Subject(s) - nanowire , non volatile memory , ferroelectricity , materials science , optoelectronics , nanotechnology , dielectric
A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side‐gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side‐gate geometries.