Open AccessNew Insights into Intrinsic Point Defects in V 2 VI 3 Thermoelectric Materials
Author(s) -
Zhu Tiejun,
Hu Lipeng,
Zhao Xinbing,
He Jian
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201600004
Subject(s) - thermoelectric effect , crystallographic defect , thermoelectric materials , materials science , context (archaeology) , engineering physics , doping , nanotechnology , semiconductor , field (mathematics) , condensed matter physics , optoelectronics , physics , thermodynamics , mathematics , paleontology , biology , pure mathematics
Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V 2 VI 3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V 2 VI 3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V 2 VI 3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.