Open AccessControllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications
Author(s) -
Li Menglin,
Liu Donghua,
Wei Dacheng,
Song Xuefen,
Wei Dapeng,
Wee Andrew Thye Shen
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201600003
Subject(s) - graphene , plasma enhanced chemical vapor deposition , materials science , chemical vapor deposition , nanotechnology , supercapacitor , plasma , transistor , electrochemistry , electrode , chemistry , electrical engineering , voltage , physics , quantum mechanics , engineering
Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.