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Semiconductors: Interface Design Principles for High‐Performance Organic Semiconductor Devices (Adv. Sci. 6/2015)
Author(s) -
Nie Wanyi,
Gupta Gautam,
Crone Brian K.,
Liu Feilong,
Smith Darryl L.,
Ruden P. Paul,
Kuo ChengYu,
Tsai Hsinhan,
Wang HsingLin,
Li Hao,
Tretiak Sergei,
Mohite Aditya D.
Publication year - 2015
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201570021
Subject(s) - optoelectronics , materials science , bottleneck , organic solar cell , semiconductor , organic semiconductor , energy conversion efficiency , interface (matter) , photovoltaic system , acceptor , nanotechnology , active layer , layer (electronics) , computer science , electrical engineering , physics , engineering , embedded system , composite material , capillary number , condensed matter physics , capillary action , thin film transistor
Organic solar cells (OSCs) are a promising cost‐effective candidate in next generation photovoltaic technology. However, a critical bottleneck for OSCs is the electron/hole recombination loss through charge transfer state at the interface, which greatly limits the power conversion efficiency. In article number 1500024, W. Nie, A. Mohite, and co‐workers demonstrate a simple strategy of suppressing the recombination rate by inserting a spacer layer at the donor‐acceptor interface, resulting in a dramatic increase in power conversion efficiency.

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