Open AccessTribotronic Enhanced Photoresponsivity of a MoS 2 Phototransistor
Author(s) -
Pang Yaokun,
Xue Fei,
Wang Longfei,
Chen Jian,
Luo Jianjun,
Jiang Tao,
Zhang Chi,
Wang Zhong Lin
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201500419
Subject(s) - photodiode , optoelectronics , photodetection , materials science , triboelectric effect , molybdenum disulfide , threshold voltage , photoelectric effect , interfacing , transistor , voltage , photodetector , electrical engineering , computer science , computer hardware , metallurgy , composite material , engineering
Molybdenum disulfide (MoS 2 ) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS 2 tribotronic phototransistor is developed by a conjunction of a MoS 2 phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS 2 phototransistor act as a “gate” to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W −1 at the 100 mW cm −2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.