Open AccessExtremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters
Author(s) -
Chen Shanliang,
Shang Minghui,
Gao Fengmei,
Wang Lin,
Ying Pengzhan,
Yang Weiyou,
Fang Xiaosheng
Publication year - 2016
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.201500256
Subject(s) - materials science , field electron emission , current density , conformable matrix , electric field , doping , optoelectronics , bending , nanotechnology , nanostructure , thermal stability , field (mathematics) , composite material , engineering physics , electron , chemical engineering , physics , mathematics , quantum mechanics , pure mathematics , engineering
Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E to of 1.03–0.73 Vμm −1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%).