Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters | Zendy

Chen Shanliang | Zendy; Shang Minghui | Zendy; Gao Fengmei | Zendy; Wang Lin | Zendy; Ying Pengzhan | Zendy; Yang Weiyou | Zendy; Fang Xiaosheng | Zendy

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Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Author(s) -

Chen Shanliang,

Shang Minghui,

Gao Fengmei,

Wang Lin,

Ying Pengzhan,

Yang Weiyou,

Fang Xiaosheng

Publication year - 2016

Publication title -

advanced science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.388

H-Index - 100

ISSN - 2198-3844

DOI - 10.1002/advs.201500256

Subject(s) - doping , field electron emission , materials science , current (fluid) , optoelectronics , field (mathematics) , engineering physics , nanotechnology , electrical engineering , physics , engineering , quantum mechanics , mathematics , pure mathematics , electron

Novel P‐doped SiC flexible field emitters are developed on carbon fabric substrates, having both low E to of 1.03–0.73 Vμm −1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%–3.4%).

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