Open AccessHigh‐Permittivity Composites Thin Films for High‐Energy Storage Capacitor Application Using the Nonvacuum Method
Author(s) -
Wu ChiaChing,
Yang ChengFu
Publication year - 2015
Publication title -
advances in polymer technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.523
H-Index - 44
eISSN - 1098-2329
pISSN - 0730-6679
DOI - 10.1002/adv.21619
Subject(s) - materials science , composite material , dielectric , polyvinylidene fluoride , composite number , dissipation factor , permittivity , capacitance , capacitor , nano , dielectric loss , tape casting , ceramic , voltage , optoelectronics , electrode , electrical engineering , chemistry , engineering , polymer
To investigate a new embedded capacitor material with high capacitance value, the high dielectric constant (Ba 0.8 Sr 0.2 )(Ti 0.9 Zr 0.1 )O 3 ceramic was ground into nanoscale powder (nano‐BSTZ, the average particle size was approximately 73 nm). Different nano‐BSTZ contents were mixed with polyvinylidene fluoride (PVDF) to form the PVDF/nano‐BSTZ composites. The PVDF/nano‐BSTZ composite films were formed by using the nonvacuum screen printing method on indium tin oxide (ITO) glass, and their thickness was approximately 2 μm. As the nano‐BSTZ content increased from 10 to 50 wt%, the specific capacitance of the PVDF/nano‐BSTZ composite films really increased. Three different mixing rules were used to predict the effective dielectric constants of the PVDF/nano‐BSTZ composite films, and the Bruggeman's effective medium approximation and the Lichtenecker logarithmic mixing rules fitted the measured results. For the printed PVDF/nano‐BSTZ composite films, the dielectric constants also decreased with increasing measured frequency and the loss tangents were all less than 5%.