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Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors
Author(s) -
Li Qiuhui,
Xu Lin,
Liu Shiqi,
Yang Jie,
Fang Shibo,
Li Ying,
Ma Jiachen,
Zhang Zhiyong,
Quhe Ruge,
Yang Jinbo,
Lu Jing
Publication year - 2021
Publication title -
advanced theory and simulations
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.068
H-Index - 17
ISSN - 2513-0390
DOI - 10.1002/adts.202000252
Subject(s) - materials science , optoelectronics , transistor , field effect transistor , ambipolar diffusion , mosfet , semiconductor , nanotechnology , electrical engineering , physics , plasma , engineering , quantum mechanics , voltage
The emerging two‐dimensional (2D) tellurium (tellurene) has attracted much attention due to its high carrier transportability and prominent air stability. Micrometer‐scale bilayer (BL) tellurene field‐effect transistors (FETs) are successfully fabricated with a large on/off current ratio of about 10 5 . Here, the transport properties of both the n‐ and p‐type double‐gated sub‐10 nm BL tellurene metal‐oxide‐semiconductor FETs (MOSFETs) are systematically explored by using ab initio quantum transport simulation. The optimized 5, 7, and 9 nm gate‐length p‐type x ‐ and y ‐directed BL tellurene MOSFETs with a proper underlap and negative capacitance dielectric can meet or nearly meet the on‐state current, delay time, power dissipation, and energy‐delay product requirements of the International Technology Roadmap for Semiconductors for the 2022–2028 horizons for high‐performance applications. This renders BL tellurene to join the air‐stable channel candidate for the p‐type sub‐10 nm transistors.