Open AccessSolar‐Blind Ultrathin Sn‐Doped Polycrystalline Ga 2 O 3 UV Phototransistor for Normally Off Operation
Author(s) -
Yoon Youngbin,
Hwang Wan Sik,
Shin Myunghun
Publication year - 2022
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202270012
Subject(s) - optoelectronics , photodetector , photodiode , wafer , materials science , crystallite , doping , substrate (aquarium) , solar cell , power consumption , photoresistor , realization (probability) , power (physics) , physics , metallurgy , oceanography , statistics , mathematics , quantum mechanics , geology
Phototransistors The fully depleted 8‐nm‐thick polycrystalline β ‐Ga 2 O 3 semiconductor with wafer‐scale substrate expedites the realization of high‐performance, low‐power‐consumption solar‐blind photodetectors. The extremely low thickness of Ga 2 O 3 causes a quantum confinement effect and allows the proposed device to successfully achieve detection in the deep UV region (215 nm). More information can be found in article number 2100316 by Myunghun Shin and co‐workers.