Open AccessBoosting the Photocurrent in BiFeO 3 Thin Films via a Domain‐Wall‐Defect Interaction
Author(s) -
Zhang Hang-Bo,
Yang Ming-Min,
Alexe Marin
Publication year - 2023
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202200189
Subject(s) - photocurrent , materials science , annealing (glass) , thin film , optoelectronics , ferroelectricity , trapping , domain (mathematical analysis) , condensed matter physics , nanotechnology , physics , composite material , dielectric , ecology , mathematical analysis , mathematics , biology
Ferroelectric domain walls are of great interest due to their nontrivial electronic properties. Herein, a large photocurrent is detected only in the stripe domain structure of BiFeO 3 thin films. By the temperature‐resolved time‐dependent photocurrent measurements, the significant trapping effect is revealed to be associated with the abnormal photocurrent. Further optoelectronic measurements with the defect density tuned unveiled that the interaction between the defects and domain walls is essential to give a rise to a large photocurrent in BiFeO 3 thin films. The study reveals a novel domain‐wall‐defect photovoltaic effect and provides a simple thermal annealing‐treatment strategy to boost the photocurrents and power output by several folds.