Open AccessFluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon
Author(s) -
Wang Xiaoming,
He Jiajing,
Jin Shenbao,
Liu Huan,
Li Hongkai,
Wen Huimin,
Zhao Xingyan,
Abedini-Nassab Roozbeh,
Sha Gang,
Yue Fangyu,
Dan Yaping
Publication year - 2022
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202200115
Subject(s) - silicon , doping , materials science , luminescence , photoluminescence , erbium , optoelectronics , crystalline silicon , quenching (fluorescence) , optics , fluorescence , physics
The silicon‐based light‐emitting devices are the bottleneck of fully integrated silicon photonics. Doping silicon with erbium (often along with oxygen) is an attractive approach to turn silicon into a luminescent material, which has been explored for decades. One of the main challenges is the strong thermal quenching effect that results in weak photoluminescence (PL) efficiency. Herein, it is shown that the co‐doping of fluorine with erbium ions can significantly suppress the thermal quenching effect and Auger recombination, resulting in a three‐order‐of‐magnitude increase in PL compared to Er/O‐doped crystalline silicon. As a result, relatively strong PL is observed from fluorine‐doped silicon at room temperature.