Open AccessGrowth and Structure of Strong Pockels Material Strontium Barium Niobate on SrTiO 3 and Si by Molecular Beam Epitaxy
Author(s) -
Beskin Ilya M.,
Kwon Sunah,
Posadas Agham B.,
Kim Moon J.,
Demkov Alexander A.
Publication year - 2021
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202170035
Subject(s) - strontium barium niobate , materials science , molecular beam epitaxy , pockels effect , barium , epitaxy , strontium , photonics , optoelectronics , silicon , thin film , diffraction , scanning electron microscope , electron diffraction , optics , nanotechnology , chemistry , laser , composite material , ferroelectricity , dielectric , physics , organic chemistry , layer (electronics) , metallurgy
Silicon Photonics In article number 2100111 , Alexander A. Demkov and co‐workers present the molecular beam epitaxy growth of a strontium barium niobate (SBN) thin film on Si (001). The crystalline structure of the film is analyzed through x‐ray diffraction, reflective high energy electron diffraction, and scanning transmission electron microscopy. SBN, known for its very high Pockels coefficient, along with LiNbO 3 and BaTiO 3 , is a promising candidate for applications in integrated Si photonics.