Open AccessMaximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors
Author(s) -
Bartolo-Perez Cesar,
Qarony Wayesh,
Ghandiparsi Soroush,
Mayet Ahmed S.,
Ahamed Ahasan,
Cansizoglu Hilal,
Gao Yang,
Ponizovskaya Devine Ekaterina,
Yamada Toshishige,
Elrefaie Aly F.,
Wang Shih-Yuan,
Islam M. Saif
Publication year - 2021
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202000190
Subject(s) - photodetector , optoelectronics , materials science , absorption (acoustics) , quantum efficiency , fabrication , photon , ultrashort pulse , capacitance , silicon , cmos , optics , laser , physics , medicine , alternative medicine , electrode , pathology , quantum mechanics , composite material
Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high sensitivity are becoming critical for emerging applications, such as light detection and ranging (LIDAR) systems, quantum communications, and medical imaging. However, such PDs present a bandwidth‐absorption trade‐off at those wavelengths that have limited their implementation. Photon‐trapping (PT) structures address this trade‐off by enhancing the light–matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. Herein, strategies to improve the PT effect while enhancing the speed of operation are investigated. By optimizing the design of PT structures and experimentally integrating them in high‐speed PDs, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% are achieved. Empirical equations correlate the quantum efficiency of PDs with the physical properties of the PT structures, material characteristics, and limitations of the fabrication technologies. The results that are obtained open routes toward designing cost‐effective complementary metal–oxide‐semiconductor (CMOS)‐integrated receivers.