Open AccessEnhanced Photostability and Photoluminescence of PbI 2 via Constructing Type‐I Heterostructure with ZnO
Author(s) -
Li Jixiu,
Li Yuanzheng,
Liu Weizhen,
Feng Qiushi,
Huang Rui,
Zhu Xiaonan,
Liu Xiuling,
Zhang Cen,
Xu Haiyang,
Liu Yichun
Publication year - 2021
Publication title -
advanced photonics research
Language(s) - English
Resource type - Journals
ISSN - 2699-9293
DOI - 10.1002/adpr.202000183
Subject(s) - photoluminescence , heterojunction , materials science , optoelectronics , layer (electronics) , thermal stability , deposition (geology) , laser , excitation , pulsed laser deposition , polymer , conductivity , chemical engineering , nanotechnology , thin film , optics , composite material , chemistry , paleontology , physics , electrical engineering , sediment , engineering , biology
Improving the stability of lead iodide (PbI 2 ), especially photostability, is in crucial demand for the realization of application‐level optoelectronic devices. In this regard, deposition of organic polymers on PbI 2 as a protective layer is a common strategy to improve its stability, but polymers with low thermal conductivity generally cannot produce the desired effect. Herein, a novel strategy is proposed for improving the photostability of PbI 2 at different excitation wavelengths, including 320, 405, and 532 nm, via constructing type‐I heterostructure with ZnO with high thermal conductivity. In addition, due to the type‐I band alignment between PbI 2 and ZnO, the photogenerated carriers in ZnO can be transferred to PbI 2 , resulting in a nearly eightfold photoluminescence enhancement of PbI 2 under 320 nm laser excitation. The ZnO as a protective layer forming type‐I heterostructure is evidenced as a feasible strategy for enhancing the photostability and photoluminescence of PbI 2 , facilitating the development of practical applications.