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Tailored Local Bandgap Modulation as a Strategy to Maximize Luminescence Yields in Mixed‐Halide Perovskites
Author(s) -
Feldmann Sascha,
Neumann Timo,
Ciesielski Richard,
Friend Richard H.,
Hartschuh Achim,
Deschler Felix
Publication year - 2021
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202100635
Subject(s) - photoluminescence , materials science , halide , perovskite (structure) , band gap , optoelectronics , luminescence , fabrication , semiconductor , charge carrier , direct and indirect band gaps , inorganic chemistry , chemical engineering , chemistry , medicine , alternative medicine , pathology , engineering
Halide perovskites have emerged as high‐performance semiconductors for efficient optoelectronic devices, not least because of their bandgap tunability using mixtures of different halide ions. Here, temperature‐dependent photoluminescence microscopy with computational modelling is combined to quantify the impact of local bandgap variations from disordered halide distributions on the global photoluminescence yield in mixed‐halide perovskite films. It is found that fabrication temperature, surface energy, and charge recombination constants are keys for describing local bandgap variations and charge carrier funneling processes that control the photoluminescence quantum efficiency. It is reported that further luminescence efficiency gains are possible through tailored bandgap modulation, even for materials that have already demonstrated high luminescence yields. The work provides a novel strategy and fabrication guidelines for further improvement of halide perovskite performance in light‐emitting and photovoltaic applications.