Premium
In‐Situ and Reversible Enhancement of Photoluminescence from CsPbBr 3 Nanoplatelets by Electrical Bias
Author(s) -
Wang Ziming,
Huang Zhigao,
Liu Gaoyu,
Cai Bo,
Zhang Shengli,
Wang Yue
Publication year - 2021
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202100346
Subject(s) - materials science , photoluminescence , passivation , optoelectronics , perovskite (structure) , semiconductor , indium tin oxide , ion , nanotechnology , thin film , chemical engineering , physics , layer (electronics) , quantum mechanics , engineering
In‐situ and real‐time modulation of the optical properties of semiconductor nanoemitters by a CMOS‐compatible strategy holds great promise for developing functional and integrated optoelectronic devices. Herein, the reversible and giant ( > 13 times) enhancement of the photoluminescence (PL) from inorganic halide perovskite nanoplatelets by electrical bias is demonstrated for the first time. Based on the comprehensive spectroscopic analysis, the improved PL performance is attributed to the dynamic surface healing effect by bias‐induced ion redistribution. The switching from PL quenching to PL enhancement from CsPbBr 3 nanoplatelet is manifested at threshold temperature of ≈ 190 K. Moreover, the temperature dependent measurements unravel the activation energy of 142.8 ± 31.1 meV, corroborating that the drifted species of anion (Br − ) or V Br dominates the trap healing process. Accordingly, a three‐stage defect passivation model of the vertical configuration is established. The synergistic effects of ion redistribution and charge injection caused by thermal equilibrium energy band bending on the optical properties of the perovskite is further investigated by contacting the perovskite with indium tin oxide electrode. These results provide novel insight into the photophysical properties of halide perovskites and are beneficial for display and lighting applications in future, especially on‐chip integrated photonics circuits and systems.