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ZnSnN 2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap
Author(s) -
Olsen Vegard Skiftestad,
Øversjøen Vetle,
Gogova Daniela,
Pécz Béla,
Galeckas Augustinas,
Borgersen Jon,
Karlsen Kjetil,
Vines Lasse,
Kuznetsov Andrej
Publication year - 2021
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202100015
Subject(s) - wurtzite crystal structure , materials science , nitride , dislocation , lattice constant , band gap , reciprocal lattice , lattice (music) , optoelectronics , condensed matter physics , optics , nanotechnology , diffraction , metallurgy , physics , composite material , layer (electronics) , zinc , acoustics
Semiconducting II‐IV nitrides exhibit tunability of optoelectronic properties similar to that of the group III nitrides, while comprising earth‐abundant and potentially low‐cost elements. However, the II‐IV nitrides synthesis is immature, limiting the explorations. Herein, ZnSnN 2 hetero‐epitaxial films grown by high‐power impulse magnetron sputtering, having the quality at the level of the III‐nitrides layers grown without dislocation‐reducing strategies are demonstrated. This breakthrough, in addition to paving the way toward potential applications, enables reliable measurements of the ZnSnN 2 properties in real space and k ‐space. In particular, for wurtzite ZnSnN 2 films with total dislocation density of ≤ 5 × 10 10 cm −2 , the lattice parameters and the optical band gap ( E g ) are determined with the accuracy not being accessible before for this material, e.g. E g = 1.67 ± 0.03 eV. Thus, looking retrospectively, the authors’ data set the ZnSnN 2 —and perhaps more generally the II‐IV nitrides—at the stage comparable to that of the beginning of the III‐nitrides rising era.