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Individual Si Nanospheres Wrapped in a Suspended Monolayer WS 2 for Electromechanically Controlled Mie‐Type Nanopixels
Author(s) -
Yan Jiahao,
Liu Xinyue,
Mao Bijun,
Yang Guowei,
Li Baojun
Publication year - 2021
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202001954
Subject(s) - materials science , optoelectronics , dielectric , monolayer , photoluminescence , exciton , nanostructure , silicon , nanotechnology , condensed matter physics , physics
All‐dielectric (especially silicon) nanostructures that are capable of low‐loss sub‐wavelength light localization are favorable for miniaturized all‐optical or optoelectronic chips. Recently, Si waveguides have been integrated with the 2D transition‐metal dichalcogenides (TMDCs) with atomic thinness and intense light–matter interactions for high‐performance optoelectronic devices. However, further miniaturized and nanoscale optoelectronic devices are highly necessary and can be realized using all‐dielectric Si nanostructures. So far, realizing electrically controlled coupling between all‐dielectric nanostructures and TMDCs is challenging at the subwavelength scale. Here, the electrically controlled optical nanopixels using individual Si nanospheres are reported, which are conventional all‐dielectric units with strong Mie‐type magnetic resonances, wrapped in suspended WS 2 monolayers. By applying gate voltages, deformation of the WS 2 monolayer occurs as an opening or a closing umbrella. As a result, the scattering intensities are tuned by 40% because of the change in the Mie‐exciton coupling. Simultaneously, a doubled photoluminescence intensity enhancement with a 0.014 eV redshift of excitonic energy is observed, owing to the cooperation of the electromechanics and electrostatic doping. The findings suggest a new approach to build nanoscale optoelectronic devices and display units.