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Impact of Individual Structural Defects in GaAs Solar Cells: A Correlative and In Operando Investigation of Signatures, Structures, and Effects
Author(s) -
Chen Qiong,
McKeon Brandon S.,
Zhang Sunny Y.,
Zhang Fan,
Hu Changkui,
Gfroerer Timothy H.,
Wanlass Mark W.,
Smith David J.,
Zhang Yong
Publication year - 2021
Publication title -
advanced optical materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.89
H-Index - 91
ISSN - 2195-1071
DOI - 10.1002/adom.202001487
Subject(s) - correlative , materials science , photoluminescence , electroluminescence , dislocation , raman spectroscopy , optoelectronics , crystallographic defect , semiconductor , nanotechnology , chemical physics , crystallography , optics , chemistry , physics , composite material , philosophy , linguistics , layer (electronics)
Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic‐scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I – V characteristics, and high‐resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.